We show that quantum resistance standards made of transferred graphene reachthe uncertainty of semiconductor devices, the current reference system inmetrology. A large graphene device (150 \times 30 \mum2), exfoliated andtransferred onto GaAs, revealed a quantization with a precision of (-5.1 \pm6.3) \times 10-9 accompanied by a vanishing longitudinal resistance at currentlevels exceeding 10 \muA. While such performance had previously only beenachieved with epitaxially grown graphene, our experiments demonstrate thattransfer steps, inevitable for exfoliated graphene or graphene grown bychemical vapor deposition (CVD), are compatible with the requirements of highquality quantum resistance standards.
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机译：我们表明，由转移的石墨烯制成的量子电阻标准达到了半导体器件的不确定性，即当前的参考系统计量学。剥落并转移到GaAs上的大型石墨烯器件（150 x 30 xum2）显示出的量化精度为（-5.1 \ pm6.3）x 10-9，同时在电流水平超过10 \ muA时纵向电阻消失了。尽管以前只能通过外延生长的石墨烯才能实现这种性能，但我们的实验表明，剥离的石墨烯或通过化学气相沉积（CVD）生长的石墨烯不可避免的转移步骤与高质量量子电阻标准的要求兼容。
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